SIJ438DP www.vishay.com vishay siliconix s16-0750-rev. a, 25-apr-16 1 document number: 69684 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 40 v (d-s) mosfet ordering information : ? SIJ438DP-t1-ge3 (lead (pb)-free and halogen-free) features ? trenchfet ? gen iv power mosfet ? tuned for the lowest r ds -q oss fom ? 100 % r g and uis tested ?q gd / q gs ratio < 1 optimizes switching characteristics ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? synchronous rectification ?oring ? high power density dc/dc ? vrms and embedded dc/dc ? dc/ac inverters ?load switch notes a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. f. maximum under steady stat e conditions is 65 c/w. g. package limited. product summary v ds (v) r ds(on) ( ? ) max. i d (a) a, g q g (typ.) 40 0.00135 at v gs = 10 v 80 58 nc 0.00175 at v gs = 4.5 v 80 powerpak ? s o-8l s in g le 2 s 3 s 4 g 1 s d bottom view 1 6.15 mm 5.13 mm top view n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs +20, -16 continuous drain current (t j = 150 c) t c = 25 c i d 80 g a t c = 70 c 80 g t a = 25 c 45.3 b, c t a = 70 c 36.2 b, c pulsed drain current (t = 100 s) i dm 200 continuous source-drain diode current t c = 25 c i s 63 t a = 25 c 4.5 b, c single pulse avalanche current l = 0.1 mh i as 50 single pulse avalanche energy e as 125 mj maximum power dissipation t c = 25 c p d 69.4 w t c = 70 c 44.4 t a = 25 c 5 b, c t a = 70 c 3.2 b, c operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol ty pical maximum unit maximum junction-to-ambient b, f t ? 10 s r thja 20 25 c/w maximum junction-to-case (drain) steady state r thjc 1.3 1.8
SIJ438DP www.vishay.com vishay siliconix s16-0750-rev. a, 25-apr-16 2 document number: 69684 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. ? ? ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 - - v v ds temperature coefficient ? v ds /t j i d = 250 a -22- mv/c v gs(th) temperature coefficient ? v gs(th) /t j --5.6- gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.1 - 2.4 v gate-source leakage i gss v ds = 0 v, v gs = +20 v, -16 v - - 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v - - 1 a v ds = 40 v, v gs = 0 v, t j = 55 c - - 10 on-state drain current a i d(on) v ds ? 5 v, v gs = 10 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a - 0.00110 0.00135 ? v gs = 4.5 v, i d = 10 a - 0.00145 0.00175 forward transconductance a g fs v ds = 10 v, i d = 20 a - 149 - s dynamic b input capacitance c iss v ds = 20 v, v gs = 0 v, f = 1 mhz - 9400 - pf output capacitance c oss - 1340 - reverse transfer capacitance c rss - 215 - total gate charge q g v ds = 20 v,v gs = 10 v, i d = 10 a - 121 182 nc v ds = 20 v,v gs = 4.5 v, i d = 10 a -5887 gate-source charge q gs -22.6- gate-drain charge q gd -13.5- output charge q oss v ds = 20 v, v gs = 0 v - 62.5 94 gate resistance r g f = 1 mhz 0.4 1.1 2.0 ? turn-on delay time t d(on) v dd = 20 v, r l = 2 ? i d ? 10 a, v gen = 10 v, r g = 1 ? -1632 ns rise time t r -1938 turn-off delay time t d(off) -54108 fall time t f -918 turn-on delay time t d(on) v dd = 20 v, r l = 2 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? -55110 rise time t r -98196 turn-off delay time t d(off) -4794 fall time t f -1734 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - - 63 a pulse diode forward current (t = 100 s) i sm --200 body diode voltage v sd i s = 5 a - 0.7 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c - 60 120 ns body diode reverse recovery charge q rr - 95 190 nc reverse recovery fall time t a -33- ns reverse recovery rise time t b -27-
SIJ438DP www.vishay.com vishay siliconix s16-0750-rev. a, 25-apr-16 3 document number: 69684 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge transfer characteristics capacitance on-resistance vs. junction temperature 10 100 1000 10000 0 40 80 120 160 200 00.511.522.5 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 4 v v gs = 2 v v gs = 3 v 10 100 1000 10000 0 0.0006 0.0012 0.0018 0.0024 0.003 0 20406080100 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v 10 100 1000 10000 0 2 4 6 8 10 0 255075100125 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line v ds = 30 v v ds = 20 v v ds = 10 v i d = 20 a 10 100 1000 10000 0 40 80 120 160 200 012345 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 2000 4000 6000 8000 10000 12000 0 8 16 24 32 40 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0.5 0.8 1.1 1.4 1.7 2.0 -50-25 0 255075100125150 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 20 a v gs = 10 v v gs = 4.5 v
SIJ438DP www.vishay.com vishay siliconix s16-0750-rev. a, 25-apr-16 4 document number: 69684 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 -1.0 -0.7 -0.4 -0.1 0.2 0.5 -50 -25 0 25 50 75 100 125 150 axis title 1st line 2nd line 2nd line v gs(th) - variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 0 0.002 0.004 0.006 0.008 0.01 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 125 c i d = 20 a 10 100 1000 10000 0 40 80 120 160 200 0.001 0.01 0.1 1 10 axis title 1st line 2nd line 2nd line power (w) time (s) 2nd line 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t a = 25 c single pulse bvdss limited 100 ms 10 ms 1 ms 100 s 10 s dc 1s i d limited
SIJ438DP www.vishay.com vishay siliconix s16-0750-rev. a, 25-apr-16 5 document number: 69684 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current derating a power, junction-to-case power, junction-to-ambient note a. the power dissipation p d is based on t j (max.) = 150 c, using junction-t o-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 10 100 1000 10000 0 40 80 120 160 200 0 25 50 75 100 125 150 axis title 1st line 2nd line 2nd line i d - drain current (a) t c - case temperature (c) 2nd line package limited 10 100 1000 10000 0 20 40 60 80 100 0 25 50 75 100 125 150 axis title 1st line 2nd line 2nd line power (w) t c - case temperature (c) 2nd line 10 100 1000 10000 0 0.5 1.0 1.5 2.0 2.5 0255075100125150 axis title 1st line 2nd line 2nd line power (w) t a - ambient temperature (c) 2nd line
SIJ438DP www.vishay.com vishay siliconix s16-0750-rev. a, 25-apr-16 6 document number: 69684 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69684 . 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2 p dm t 1 t 2 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm -t a = p dm z thja (t) 4. surface mounted t 1 t 2 notes: 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2
package information www.vishay.com vishay siliconix revision: 16-may-16 1 document number: 69003 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8l case outline for non-al parts b2 back s ide view (dual) b4 b3 b b1 e d d1 e e1 l1 to p s ide view a1 w l1 l 0.25 gauge line w3 w2 w1 e2 e2 d2 b3 b4 back s ide view ( s ingle) a c w3 w2 w1 k d2 d3 d3 f
package information www.vishay.com vishay siliconix revision: 16-may-16 2 document number: 69003 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? millimeters will gover dim. millimeters inches min. nom. max. min. nom. max. a 1.00 1.07 1.14 0.039 0.042 0.045 a1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 d 5.00 5.13 5.25 0.197 0.202 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.86 3.96 4.06 0.152 0.156 0.160 d3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 bsc 0.050 bsc e 6.05 6.15 6.25 0.238 0.242 0.246 e1 4.27 4.37 4.47 0.168 0.172 0.176 e2 3.18 3.28 3.38 0.125 0.129 0.133 f - - 0.15 - - 0.006 l 0.62 0.72 0.82 0.024 0.028 0.032 l1 0.92 1.07 1.22 0.036 0.042 0.048 k 0.51 0.020 w 0.23 0.009 w1 0.41 0.016 w2 2.82 0.111 w3 2.96 0.117 ? 0 - 10 0 - 10 ecn: t16-0221-rev. d, 16-may-16 dwg: 5976
pad pattern www.vishay.com vishay siliconix revision: 07-feb-12 1 document number: 63818 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for powerpak ? so-8l single recommended mi nimum pad s dimen s ion s in mm (inche s ) 5.000 (0.197) 2.310 (0.091) 0.510 (0.020) 0.595 (0.023) 4.061 (0.160) 3.630 (0.143) 0.410 (0.016) 0.710 (0.028) 0.610 (0.024) 2.715 (0.107) 1.270 (0.050) 1.905 (0.075) 0.860 (0.034) 0.820 (0.032) 7.250 (0.285) 8.250 (0.325) 6.250 (0.246) 1.291 (0.051)
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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